Lead advanced TCAD modelling and fabrication strategiesDrive innovation in SiC-MOSFETs for ultra-high efficiency at 1.2kV+CLOSING DATE: Thursday 26th June 2025 at 23:55 (BST) Read more
Title: Assisted microwave annealing for spin defects in silicon carbide Candidates with a background in MTech/ME/MS/MSc/BE/BTech in Mechanical/Manufacturing/Materials/Metallurgy/Physics or any other similar specialization are encouraged...
PhD studentship is available to work on SiC-related projects. The PhD topics could include any aspect of SiC power device fabrication, TCAD simulation, or device...
Meet-up April 25, 2024 | 10:30AM (Stockholm) Meet-up for those interested in either being a new generation crystal grower in silicon carbide, or build new...