The PhD thesis aims to understand the fundamental mechanisms of 3C-SiC growth via TSM by studying various aspects of the process—such as thermodynamics, dissolution/growth kinetics, growth interface dynamics, and the generation and elimination of defects—through a multiscale and multiphysics approach. The goal is to identify the factors that enable stable and homogeneous growth, leading to an extremely low density of structural defects. A comprehensive approach, combining high-temperature experimentation, numerical process simulation, and advanced characterization techniques (synchrotron, TEM, EBSD), will be implemented.
SIMaP (Science and Engineering of Materials and Processes – UMR 5266), a joint laboratory of CNRS/Grenoble INP-UGA/Université Grenoble Alpes
Deadline to apply: 24 July 2026 23:59