Seminon Forum | SiC PVT research and the future science
Forum Oct 28, 2025 | 10 AM (CET)
In this forum meeting we will discuss the future of SiC PVT research. Today the PVT growth is mainly for boules from which wafers are cut. The standard surface off-orientation is 4 degrees. The CS-PVT explores epitaxial growth of SiC wafers. The 4 degree off-orientation may not be the most optimum for emerging technologies. That offers a research focus of tailored PVT growth for wafers which are used for epitaxial growth for emerging technologies. At the forum we will discuss the growth and properties of grown material for new research directions and collaborations.
The PVT has several options for research. Today the 4H-SIC polytype is mostly explored. The 6H-SiC polytype has not so much interest for power electronics. However, it can be more suitable for other purposes. For example epitaxial graphene or 3C-SiC. Once the 3C-SiC has possibility of seeds from the 6H-SiC, the PVT for 3C-SiC bulk growth is an exiting research and science avenue. In this forum we will discuss the options and interests to build a research collaboration for new research directions.