Lead advanced TCAD modelling and fabrication strategies
Drive innovation in SiC-MOSFETs for ultra-high efficiency at 1.2kV+
CLOSING DATE: Thursday 26th June 2025 at 23:55 (BST)

Lead advanced TCAD modelling and fabrication strategies
Drive innovation in SiC-MOSFETs for ultra-high efficiency at 1.2kV+
CLOSING DATE: Thursday 26th June 2025 at 23:55 (BST)